| 发明名称 |
SEMICONDUCTOR DEVICE, DISPLAY, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE |
| 摘要 |
A semiconductor device includes: a gate electrode layer; a gate insulating film provided on the gate electrode layer; a semiconductor layer provided, in opposition to the gate electrode layer, on the gate insulating film; and a source-drain electrode layer provided on the semiconductor layer and on the gate insulating film. A face, in opposition to the gate insulating film, of the semiconductor layer is located above a face of a section, located on the gate insulating film, of the source-drain electrode layer. |
| 申请公布号 |
US2015097163(A1) |
申请公布日期 |
2015.04.09 |
| 申请号 |
US201314395676 |
申请日期 |
2013.04.15 |
| 申请人 |
Sony Corporation |
发明人 |
Kanno Michihiro;Kawamura Takahiro;Inamura Hiroshi |
| 分类号 |
H01L51/05;H01L29/423;H01L27/28;H01L29/786;H01L27/12 |
主分类号 |
H01L51/05 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device, comprising:
a gate electrode layer; a gate insulating film provided on the gate electrode layer; a semiconductor layer provided, in opposition to the gate electrode layer, on the gate insulating film; and a source-drain electrode layer provided on the semiconductor layer and on the gate insulating film, wherein a face, in opposition to the gate insulating film, of the semiconductor layer is located above a face of a section, located on the gate insulating film, of the source-drain electrode layer. |
| 地址 |
Tokyo JP |
