| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element that prevents migration of Ag and has a high reliability, and that has a high light extraction efficiency.SOLUTION: A semiconductor light-emitting element comprises: an ohmic electrode layer 15 formed on a surface of a semiconductor structure layer 10 including a light-emitting layer 13; a reflection metal layer 16 formed so as to cover at least an end part of the ohmic electrode layer, and containing Ag; and a coating electrode layer 17 formed so as to bury the reflection metal layer. |
