| 发明名称 |
METHODS FOR PRODUCING POLYSILICON RESISTORS |
| 摘要 |
A method for producing a polysilicon resistor device may include: forming a polysilicon layer; implanting first dopant atoms into at least a portion of the polysilicon layer, wherein the first dopant atoms include deep energy level donors; implanting second dopant atoms into said at least a portion of said polysilicon layer; and annealing said at least a portion of said polysilicon layer. |
| 申请公布号 |
US2015099341(A1) |
申请公布日期 |
2015.04.09 |
| 申请号 |
US201314048173 |
申请日期 |
2013.10.08 |
| 申请人 |
Infineon Technologies AG |
发明人 |
Gruber Hermann;Gross Thomas;Irlbacher Werner;Zundel Markus;von Borcke Mathias;Schulze Hans Joachim |
| 分类号 |
H01L49/02 |
主分类号 |
H01L49/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for producing a polysilicon resistor device, comprising:
forming a polysilicon layer; implanting first dopant atoms into at least a portion of said polysilicon layer, wherein the first dopant atoms comprise deep energy level donors; implanting second dopant atoms into said at least a portion of said polysilicon layer; and annealing said at least a portion of said polysilicon layer after implanting the first and second dopant atoms. |
| 地址 |
Neubiberg DE |
