| 摘要 |
<p>This storage device has films (189, 190, 191, 192) that are formed around top sections of columnar insulator layers (180, 181, 182, 183) and change in resistance and bottom electrodes (184, 185, 186, 187) that are formed around bottom sections of said columnar insulator layers (180, 181, 182, 183) and are connected to the films (189, 190, 191, 192) that change in resistance.</p> |
