| 摘要 |
PROBLEM TO BE SOLVED: To store information with a wider reading margin by using as a storage element a resistance change type element for which forming is not performed, thereby improving the reliability of information storage.SOLUTION: A semiconductor device includes a memory cell array having a plurality of memory cells. Each of the memory cells includes a resistance change type element including a first electrode and second electrode sandwiching a variable resistor, in which after a forming voltage is applied between the first electrode and second electrode, an electric resistance of the variable resistor reversibly changes according to the application of a write voltage between the first electrode and second electrode. The memory cell array includes: first memory cells that are memory cells to which the forming voltage is applied; and second memory cells to which the forming voltage is not applied. The second memory cells are constituted so as to store one of a mutually different first logical value and second logical value constituting first information, for example, control information. |
