发明名称 |
Display Device and Method of Fabricating the Same |
摘要 |
A disclosed display device includes a first oxide semiconductor layer and an oxide semiconductor connection wire both formed from an oxide semiconductor material layer over a substrate. The oxide semiconductor connection wire is integrally connected to the first oxide semiconductor layer and has a lower sheet resistance than the first oxide semiconductor layer. The display device also includes a first gate electrode either over the first oxide semiconductor layer or between the first oxide semiconductor layer and the substrate. The display device further includes a first gate insulation layer between the first oxide semiconductor layer and the first gate electrode. |
申请公布号 |
US2015097182(A1) |
申请公布日期 |
2015.04.09 |
申请号 |
US201414506812 |
申请日期 |
2014.10.06 |
申请人 |
LG Display Co., Ltd. |
发明人 |
Park ChongHun;Yang Seung-Yong |
分类号 |
H01L27/12;H01L21/02;H01L29/66 |
主分类号 |
H01L27/12 |
代理机构 |
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代理人 |
|
主权项 |
1. A display device, comprising:
a first oxide semiconductor layer over a substrate, the first oxide semiconductor layer being a first portion of an oxide semiconductor material layer over the substrate; an oxide semiconductor connection wire over the substrate, wherein the oxide semiconductor connection wire is formed from a second portion of the oxide semiconductor material layer, is integrally connected to the first oxide semiconductor layer, and has a lower sheet resistance than the first oxide semiconductor layer; a first gate electrode either over the first oxide semiconductor layer or between the first oxide semiconductor layer and the substrate; and a first gate insulation layer between the first oxide semiconductor layer and the first gate electrode. |
地址 |
Seoul KR |