METHOD OF MANUFACTURING SINGLE-CRYSTAL INGOT, METHOD OF MANUFACTURING SINGLE-CRYSTAL SUBSTRATE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a single-crystal ingot which has less crystal defects.SOLUTION: A first single-crystal ingot 12 is grown on a first seed crystal 11 provided with a first plane PL1 perpendicular to a {0001} plane. A second seed crystal 21 provided with a second plane PL2 having an off angle of less than 10° from the {0001} plane is cut out of the first single-crystal ingot 12. The process of growing the first single-crystal ingot 12 is so carried out that variation in <0001> orientation of the second seed crystal 21 in a range of 10 mm square of the second plane PL2 is less than 0.15°. A second single-crystal ingot 22 is grown on the second seed crystal 21.