发明名称 Herstellungsverfahren und Herstellungsvorrichtung für Halbleitervorrichtungen
摘要 <p>A marker which is a reference of a coordinate position defining a region of a chip that is manufactured in a semiconductor substrate is formed. A crystal defect on the semiconductor substrate is detected. The coordinate position of the detected crystal defect is detected on the basis of the marker. Therefore, it is possible to detect the position of a semiconductor chip including the crystal defect among the semiconductor chips manufactured on the semiconductor substrate. As a result, it is possible to easily detect the position of the semiconductor device including the position of the crystal defect on the semiconductor substrate.</p>
申请公布号 DE112013002341(T8) 申请公布日期 2015.04.09
申请号 DE20131102341T 申请日期 2013.03.18
申请人 FUJI ELECTRIC CO., LTD. 发明人 TANAKA, ATSUSHI,;TSUJI, TAKASHI,
分类号 H01L21/66 主分类号 H01L21/66
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