| 发明名称 |
Semiconductor Device with Buried Conduction Path |
| 摘要 |
A device includes a semiconductor substrate, emitter and collector regions disposed in the semiconductor substrate, having a first conductivity type, and laterally spaced from one another, and a composite base region disposed in the semiconductor substrate, having a second conductivity type, and including a base contact region, a buried region through which a buried conduction path between the emitter and collector regions is formed during operation, and a base link region electrically connecting the base contact region and the buried region. The base link region has a dopant concentration level higher than the buried region and is disposed laterally between the emitter and collector regions. |
| 申请公布号 |
US2015097265(A1) |
申请公布日期 |
2015.04.09 |
| 申请号 |
US201314047222 |
申请日期 |
2013.10.07 |
| 申请人 |
Lin Xin;Blomberg Daniel J.;Zuo Jiang-Kai |
发明人 |
Lin Xin;Blomberg Daniel J.;Zuo Jiang-Kai |
| 分类号 |
H01L29/735;H01L29/66 |
主分类号 |
H01L29/735 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A device comprising:
a semiconductor substrate; emitter and collector regions disposed in the semiconductor substrate, having a first conductivity type, and laterally spaced from one another; and a composite base region disposed in the semiconductor substrate, having a second conductivity type, and comprising a base contact region, a buried region through which a buried conduction path between the emitter and collector regions is formed during operation, and a base link region electrically connecting the base contact region and the buried region; wherein the base link region has a dopant concentration level higher than the buried region and is disposed laterally between the emitter and collector regions, and wherein the buried conduction path extends across an entire lateral extent of the base link region. |
| 地址 |
Phoenix AZ US |
