STRUCTURES, APPARATUSES AND METHODS FOR FABRICATING SENSORS IN MULTI-LAYER STRUCTURES

摘要

Structures, apparatuses, and methods are provided for fabricating a semiconductor device structure. An example semiconductor device structure includes a first substrate, a first device layer, a second device layer and a third device layer. The first device layer may be on the first substrate and include a switch. The second device layer may be on the first device layer and include a sensing device. The third device layer may include one or more inter-level connection structures configured to electrically connect the switch to the sensing device. The switch may be configured to be electrically turned on in response to a selection signal. The sensing device may be configured to generate an output signal in response to the switch being turned on.

主权项

1. A semiconductor device structure comprising:
a first substrate; a first device layer on the first substrate, the first device layer including a switch; a second device layer on the first device layer, the second device layer including a sensing device; and a third device layer including one or more inter-level connection structures configured to electrically connect the switch to the sensing device; wherein:
the switch is configured to be electrically turned on in response to a selection signal; andthe sensing device is configured to generate an output signal in response to the switch being turned on.