METHOD OF NON-DESTRUCTIVE POST TUNGSTEN ETCH RESIDUE REMOVAL

摘要

Embodiments of the invention generally relate to methods of removing and/or cleaning a substrate surface having refractory metal portions disposed thereon using water vapor plasma treatment. In one embodiment, a method for cleaning a surface of a substrate includes positioning a substrate in a processing chamber, the substrate having a refractory metal disposed thereon, forming a process gas comprising water vapor, maintaining a process pressure in the processing chamber above about 0.5 Torr, forming a plasma in the process gas to form an activated water vapor and exposing the refractory metal to the activated water vapor.

主权项

1. A method for cleaning a surface of a substrate, comprising:
positioning a substrate in a processing chamber, the substrate having a refractory metal disposed thereon; forming a process gas comprising water vapor; maintaining a process pressure in the processing chamber above about 0.5 Torr; forming a plasma in the process gas to form an activated water vapor, the activated water vapor comprising H+ ions and O− ions, wherein the H+ ions and O− ions are reacted to form −OH ions to create a ratio of H+ ions to O− ions which is greater than 2:1; and exposing the refractory metal to the activated water vapor, the activated water vapor removing one or more residues from the refractory metal.