| 摘要 |
PROBLEM TO BE SOLVED: To provide a highly-reliable semiconductor element, a display device, a method of manufacturing the semiconductor element, and a method of manufacturing the display device.SOLUTION: Provided is a semiconductor element comprising a semiconductor layer, a first conductive part, a second conductive part, a gate electrode, and a gate insulating film. The semiconductor layer has a first portion, a second portion arranged alongside of the first portion in a first direction, and a third portion provided between the first portion and the second portion, and contains an oxide semiconductor. The first conductive part is electrically connected with the first portion. The second conductive part is separated from the first conductive part, and electrically connected with the second portion. The gate electrode is separated from the first conductive part and the second conductive part, and opposed to the third portion. The gate insulating film is provided between the third portion and the gate electrode. A nitrogen concentration of the first portion is higher than that of the third portion. A nitrogen concentration of the second portion is higher than that of the third portion. |
