发明名称 Power semiconductor device
摘要 <p>The present invention relates to a power semiconductor device including a power semiconductor module and a conductive charge current terminal element. The power semiconductor module has a power semiconductor component arranged on a conductive layer of a specific structure, a conductive charge current connection element is arranged on the conductive layer, the charge current terminal element includes a first contact part and elastically contacting protrusion part on a first end area of the charge current terminal element, a first part of the charge current connection element is arranged between the first contact part and the contacting protrusion part of the charge current terminal element, and a contacting protrusion part applies a pressure on the first part of the charge current connection element to press the first part of the charge current connection element for the first contact part of the charge current terminal element. Provided in the present invention is a power semiconductor device in which a terminal element is accurately and electrically conductively connected to the charge current connection element for a long charge current period, and a charge current terminal element and a charge current connection element are connected in a simple method without input of significant heat.</p>
申请公布号 KR20150037562(A) 申请公布日期 2015.04.08
申请号 KR20140127677 申请日期 2014.09.24
申请人 发明人
分类号 H01L23/48;H01L25/07 主分类号 H01L23/48
代理机构 代理人
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