| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a chemically amplified type photoresist composition and the like for providing good line edge roughness and an exposure margin in forming a fine pattern. <P>SOLUTION: The chemically amplified type photoresist composition contains an acid generator expressed by formula (B1), a resin (A1) and a resin (A2), wherein the resin (A1) and the resin (A2) are obtained by polymerizing acrylic monomers (a1), (a2), (a3) in predetermined charge amounts. The monomer (a1) includes a 6-20C saturated cyclic hydrocarbon, which is made alkali-soluble by the action of an acid; the monomer (a2) includes an adamantyl group substituted with a hydroxyl group; and the monomer (a3) includes a lactone ring. In formula (B1), Q<SP>1</SP>and Q<SP>2</SP>each represent F or a 1-6C perfluoroalkyl group; L<SP>b1</SP>represents a single bond or a divalent 1-17C saturated hydrocarbon group; Y represents a 1-18C aliphatic hydrocarbon group or a 3-18C saturated cyclic hydrocarbon group; and Z<SP>+</SP>represents an organic cation. <P>COPYRIGHT: (C)2011,JPO&INPIT |
