| 摘要 |
The present invention relates to an anisotropic conductive film and a semiconductor device using the same and, more specifically, to a tri-layered anisotropic conductive film on which a first insulating layer, a conductive layer, and a second insulating layer are successively laminated. The present invention provides: the anisotropic conductive film which can sufficiently fill the insulating layers between terminals by controlling liquidity of each layer, can reduce short-circuit between the terminals by reducing leakage of conductive particles into a space unit, and can enhance reliability of connection; and the semiconductor device using the same. |
