| 摘要 |
<p>A method of producing a substantially uniformly-doped relatively large area multi-layered graphene element 10 comprises the steps of forming openings 12 in the graphene element and holding the graphene element and a dopant (16, figure 1c) under low pressure conditions at an elevated temperature for a period of time. The openings may be formed by drilling, preferably using a laser, or by etching. The dopant preferably comprises iron (III) chloride. The graphene element may be formed by the transfer of monolayer CVD deposited graphene layers. A further method of producing a substantially uniformly-doped relatively large area multi-layered graphene element comprises the steps of forming the graphene element by an epitaxial growth technique and holding the graphene element and a dopant under low pressure conditions at an elevated temperature for a period of time. Also disclosed are substantially uniformly-doped relatively large area graphene elements produced by the methods of the invention.</p> |
