Semiconductor structure and fabrication method thereof

摘要

A semiconductor structure includes a substrate, an oxide layer, a metallic oxynitride layer and a metallic oxide layer. The oxide layer is located on the substrate. The metallic oxynitride layer is located on the oxide layer. The metallic oxide layer is located on the metallic oxynitride layer. In addition, the present invention also provides a semiconductor process for forming the semiconductor structure.

主权项

1. A semiconductor structure, comprising:
a substrate; an oxide layer located on the substrate; a metallic oxynitride layer located on the oxide layer, wherein the metallic oxynitride layer comprises an indium oxynitride layer; a metallic oxide layer located on the metallic oxynitride layer, wherein the metallic oxide layer comprises a hafnium oxide layer or a zirconium oxide layer; and a gate electrode layer directly covering the entire metallic oxide layer.