| 发明名称 | High impact resistant acceleration sensor | ||
| 摘要 | An acceleration sensor having a high impact resistance to prevent breakage under excessive acceleration, but can stably exert a sensing performance. The acceleration sensor is formed of an SOI substrate of a three-layered structure including a silicon layer (active layer silicon), a silicon oxide layer, and a silicon layer (substrate silicon). The acceleration sensor includes frame parts, a plurality of beam parts, the beam parts projecting inward from the frame part, and a weight part supported by the beam parts. A strain sensing part is provided on each of the beam parts. A width W of each of the beam parts, a length I of each of the beam parts, and an inner frame length L of the frame part satisfy the following relationships of Expressions (1) and (2). 2<L/I≦2.82 Expression (1)I/W≦3.68 Expression (2) | ||
| 申请公布号 | US8997570(B2) | 申请公布日期 | 2015.04.07 |
| 申请号 | US201113253398 | 申请日期 | 2011.10.05 |
| 申请人 | Dai Nippon Printing Co., Ltd. | 发明人 | Maekawa Shinji |
| 分类号 | G01P15/12;G01P15/18;B81B3/00;G01P15/08 | 主分类号 | G01P15/12 |
| 代理机构 | Burr & Brown, PLLC | 代理人 | Burr & Brown, PLLC |
| 主权项 | 1. An acceleration sensor formed of an SOI substrate of a three-layered structure including an active silicon layer, a silicon oxide layer, and a silicon substrate, the acceleration sensor comprising: a frame part; a plurality of beam parts, the beam parts projecting inward from the frame part; and a weight part supported by the beam parts; wherein: each of the beam parts is provided with a strain sensing part; and a width W of each of the beam parts, a length I of each of the beam parts, and an inner frame length L of the frame part satisfy the following relationships of Expressions (1) and (2), 2<L/I≦2.82 Expression (1)I/W≦3.68 Expression (2), wherein the weight part is completely exposed outside on a side of the beam parts so that even when an excessive acceleration up to 10,000 G is applied to the acceleration sensor, the weight part can move without contacting the acceleration sensor, wherein the strain sensing part includes piezoresistors, each having a longitudinal direction substantially parallel to the corresponding beam part, wherein windows are defined by the frame part and the beam parts, each of the windows being provided with a corner portion farthest away from the center of the acceleration sensor defined by sides arranged perpendicular to one another, and wherein the acceleration sensor is a multi-axis sensor capable of sensing strain in an x-axis direction, a y-axis direction and a z-axis direction. | ||
| 地址 | Shinjuku-Ku JP | ||