Method for manufacturing organic semiconductor element, and organic semiconductor element

摘要

A method for manufacturing an organic semiconductor element capable of obtaining an organic semiconductor element in which an organic semiconductor layer is patterned without lowering the mobility of the organic semiconductor layer through a simple and easy process, which includes: an organic semiconductor layer formation step; a first dielectric layer formation step of forming a first dielectric layer on the organic semiconductor layer to be positioned at least on a channel region between the source electrode and the drain electrode; and a second dielectric layer formation step, wherein the second dielectric layer has a contact portion contacting the organic semiconductor layer around the first dielectric layer, and a mixed layer in which the organic semiconductor layer and the second dielectric layer are mixed with each other is formed to constitute an interface between the organic semiconductor layer and the second dielectric layer in the contact portion.

主权项

1. A method for manufacturing an organic semiconductor element, comprising steps of:
an organic semiconductor layer formation step of forming an organic semiconductor layer to cover a source electrode and a drain electrode; a first dielectric layer formation step of forming a first dielectric layer on the organic semiconductor layer to be positioned at least on a channel region between the source electrode and the drain electrode; and a second dielectric layer formation step of forming a second dielectric layer on the organic semiconductor layer to cover the first dielectric layer, wherein the second dielectric layer has a contact portion contacting the organic semiconductor layer around the first dielectric layer, and a mixed layer in which the organic semiconductor layer and the second dielectric layer are mixed with each other is formed in an interface between the organic semiconductor layer and the second dielectric layer in the contact portion.