| 发明名称 | Conductive film and semiconductor device | ||
| 摘要 | A conductive film of an embodiment includes: a fine catalytic metal particle as a junction and a graphene extending in a network form from the junction. | ||
| 申请公布号 | US9000591(B2) | 申请公布日期 | 2015.04.07 |
| 申请号 | US201313768567 | 申请日期 | 2013.02.15 |
| 申请人 | Kabushiki Kaisha Toshiba | 发明人 | Yamazaki Yuichi;Wada Makoto;Saito Tatsuro;Sakai Tadashi |
| 分类号 | H01L23/48;H01L23/498;H01L23/532;B82Y30/00 | 主分类号 | H01L23/48 |
| 代理机构 | Oblon, McClelland, Maier & Neustadt, L.L.P. | 代理人 | Oblon, McClelland, Maier & Neustadt, L.L.P. |
| 主权项 | 1. A conductive film comprising: fine catalytic metal particles as a junction; a graphene extending in a network form from the junction; and an insulation film, a gap is formed between the insulation film and the graphene, and the fine catalytic metal particles are dispersed on the insulation film. | ||
| 地址 | Tokyo JP | ||