Process of forming an electronic device including a vertical conductive structure

摘要

An electronic device can include a buried conductive region and a semiconductor layer over the buried conductive region. The electronic device can further include a horizontally-oriented doped region and a vertical conductive region, wherein the vertical conductive region is electrically connected to the horizontally-oriented doped region and the buried conductive region. The electronic device can still further include an insulating layer overlying the horizontally-oriented doped region, and a first conductive electrode overlying the insulating layer and the horizontally-oriented doped region, wherein a portion of the vertical conductive region does not underlie the first conductive electrode. The electronic device can include a Schottky contact that allows for a Schottky diode to be connected in parallel with a transistor. Processes of forming an electronic device allow a vertical conductive region to be formed after a conductive electrode, a gate electrode, a source region, or both.

主权项

1. A process of forming an electronic device comprising:
providing a workpiece including a buried conductive region and a semiconductor layer over the buried conductive region, wherein the semiconductor layer has a primary surface and an opposing surface, and wherein the buried conductive region is disposed closer to the opposing surface than to the primary surface; forming a conductive electrode; forming a source region of a transistor after forming the conductive electrode; and forming a vertical conductive region adjacent to the primary surface and extending through the semiconductor layer toward the buried conductive region, wherein forming the vertical conductive region is performed after forming the conductive electrode, wherein in a finished device, the conductive electrode and the source region are electrically connected to each other.