Method for fabricating semiconductor device

摘要

A method for fabricating a semiconductor device is described. A plurality of isolation structures is formed in a substrate. The isolation structures are arranged in parallel and extend along a first direction. A well of a first conductive type is formed in the substrate. A plurality of first doped regions of a second conductive type is formed in the well. Each of the first doped regions is formed between two adjacent isolation structures. A plurality of gates of the second conductive type is formed on the substrate. The gates are arranged in parallel and extend along a second direction different from the first direction. One of the first doped regions is connected to one of the gates. A plurality of second doped regions of the first conductive type is formed in the well. Each of the second doped regions is formed in the first doped regions between two adjacent gates.

主权项

1. A method for fabricating a semiconductor device, comprising:
forming a plurality of isolation structures in a substrate, wherein the isolation structures extend along a first direction and are arranged in parallel; forming a well of a first conductive type in the substrate; forming a plurality of first doped regions of a second conductive type in the well, wherein each of the first doped regions is formed between two adjacent isolation structures respectively; forming a plurality of gates of the second conductive type on the substrate, wherein the gates extend along a second direction different from the first direction and are arranged in parallel, and one of the first doped regions is electrically connected to one of the gates; and forming a plurality of second doped regions of the first conductive type in the well, wherein each of the second doped regions is formed in the first doped regions between two adjacent gates respectively.