发明名称 Method for fabricating packaging structure having embedded semiconductor element
摘要 A method for fabricating a packaging structure having an embedded semiconductor element includes: providing a substrate having opposite first and second surfaces and at least an opening penetrating the first and second surfaces; forming a first metallic frame around the periphery of the opening on the first surface; forming at least an opening inside the first metallic frame by laser ablation; disposing a semiconductor chip in the opening; forming a first dielectric layer on the first and second surfaces and the chip; forming a first wiring layer on the first dielectric layer of the first surface; and forming a first built-up structure on the first dielectric layer and the first wiring layer of the first surface. A shape of the opening is precisely controlled through the first metallic frame around the periphery of the predefined opening region, thereby allowing the chip to be precisely embedded in the substrate.
申请公布号 US8999759(B2) 申请公布日期 2015.04.07
申请号 US201313900885 申请日期 2013.05.23
申请人 Unimicron Technology Corporation 发明人 Chia Kan-Jung
分类号 H01L21/00;H01L23/02;H01L21/50;H01L23/538;H01L23/00;H05K1/18;H01L23/31;H01L23/498;H05K3/00 主分类号 H01L21/00
代理机构 Mintz Levin Cohn Ferris Glovsky and Popeo, P.C. 代理人 Mintz Levin Cohn Ferris Glovsky and Popeo, P.C. ;Corless Peter F.;Jensen Steven M.
主权项 1. A method for fabricating a packaging structure having an embedded semiconductor element, comprising the steps of: providing a substrate having a first surface and an opposite second surface and at least an opening region predefined on the first surface; forming a first metallic frame around a periphery of the predefined opening region on the first surface of the substrate; forming an opening inside the first metallic frame by laser ablation, in a manner that the opening penetrates the first surface and the second surface of the substrate; disposing a semiconductor chip in the opening, the semiconductor chip having an active surface with a plurality of electrode pads and an opposite inactive surface; respectively forming a first dielectric layer on the first surface of the substrate and the active surface of the semiconductor chip and on the second surface of the substrate and the inactive surface of the semiconductor chip; forming a first wiring layer on the first dielectric layer on the first surface of the substrate and the active surface of the semiconductor chip; and forming a first built-up structure on the first dielectric layer and the first wiring layer on the first surface of the substrate.
地址 Taoyuan TW