Bulk fin-field effect transistors with well defined isolation

摘要

A process fabricates a fin field-effect-transistor by implanting a dopant into an exposed portion of a semiconductor substrate within a cavity. The cavity is formed in a dielectric layer on the semiconductor substrate. The cavity exposes the portion of the semiconductor substrate within the cavity. A semiconductor layer is epitaxially grown within the cavity atop the dopant implanted exposed portion of the semiconductor substrate. A height of the cavity defines a height of the epitaxially grown semiconductor.

主权项

1. A method for forming a fin field-effect-transistor, the method comprising:
with a cavity formed in a dielectric layer on a semiconductor substrate, and wherein the cavity exposing a portion of the semiconductor substrate within the cavity, implanting a dopant into the exposed portion of the semiconductor substrate within the cavity, wherein the dopant is a punch-through stopper dopant; epitaxially growing a semiconductor layer within the cavity atop the dopant implanted exposed portion of the semiconductor substrate, where a height of the cavity defines a height of the epitaxially grown semiconductor; and removing, after the semiconductor layer has been epitaxially grown, the dielectric layer to form a fin structure comprising the semiconductor layer, the fin structure atop the dopant implanted exposed portion of the semiconductor substrate.