发明名称 Transistor test structure
摘要 A test structure may characterize the properties of a transistor including a DC test structure for testing DC properties of the transistor, and an AC test structure for testing AC properties of the transistor. The DC and AC test structures may have common test pads.
申请公布号 US9000785(B2) 申请公布日期 2015.04.07
申请号 US201213557577 申请日期 2012.07.25
申请人 STMicroelectronics SA 发明人 Charbuillet Clement;Scheer Patrick
分类号 G01R31/317;G01R31/40;G01R31/02;G01R31/26;H01L21/66 主分类号 G01R31/317
代理机构 Allen, Dyer, Doppelt, Milbrath & Gilchrist, P.A. 代理人 Allen, Dyer, Doppelt, Milbrath & Gilchrist, P.A.
主权项 1. A test structure comprising: a plurality of test pads comprising at least one first test pad, and at least one common test pad; a direct current (DC) test structure comprising a test transistor, said DC test structure coupled to said at least one first test pad, and said at least one common test pad, and configured to test at least one DC property of said test transistor; and an alternating current (AC) test structure comprising a plurality of transistors adjacent said test transistor, said AC test structure coupled to said test transistor, and said at least one common test pad, said AC test structure configured to test at least one AC property of said test transistor; said test transistor and each of said plurality of transistors comprising a control terminal coupled to said at least one common test pad; said plurality of transistors configured to provide conformity transistors shared by said AC test structure and said DC test structure.
地址 Montrouge FR