发明名称 |
Metal salt-containing composition, substrate, manufacturing method of substrate |
摘要 |
An object of the present invention is to provide a method for manufacturing a substrate having a metal complex film on the surface thereof. According to the present invention, a metal salt-containing composition containing a metal salt, a polyvalent carboxylic acid having a cis-form structure, and a solvent, in which: the molar ratio of the polyvalent carboxylic acid to the metal salt is not less than 0.5 and not more than 4.0; the moisture content of the composition is not less than 0.05% by weight is used in an application method to apply on a substrate. Thereafter, a two-step heat treatment is carried out. |
申请公布号 |
US8999450(B2) |
申请公布日期 |
2015.04.07 |
申请号 |
US200913498563 |
申请日期 |
2009.09.28 |
申请人 |
Dai-Ichi Kogyo Seiyaku Co., Ltd. |
发明人 |
Saito Yasuteru;Ike Naoki |
分类号 |
B05D3/02;C01G25/02;C01G3/00;C01G3/02;C01G9/00;C01G9/02;C01G15/00;C01G19/02;C01G23/04;C01G33/00;C01G37/027;C01G39/02;C01G49/02;C01G53/04;C23C18/12 |
主分类号 |
B05D3/02 |
代理机构 |
Marshall, Gerstein & Borun LLP |
代理人 |
Marshall, Gerstein & Borun LLP |
主权项 |
1. A method for manufacturing a substrate having an oxidized metal thin film formed on the surface thereof, the method comprising:
an application step of applying on the surface of the substrate a solution comprising a Zn and/or In metal salt, a polyvalent carboxylic acid having a cis-form structure of —C(COOH)═C(COOH)—, and a solvent, the molar ratio of the polyvalent carboxylic acid to the Zn and/or In metal salt being not less than 0.5 and not more than 4.0, and the moisture content of the solution being not less than 4% by weight; a primary heating step of drying by heating the solution at a temperature of not lower than 100° C. and not higher than 150° C.; and a secondary heating step of further heating the substrate after the primary heating step at a temperature no lower than 400° C. and no higher than 500° C. thereby forming the oxidized metal thin film formed on the surface of the substrate. |
地址 |
Kyoto JP |