发明名称 Device and method for improving reading speed of memory
摘要 A memory device includes a plurality of sense amplifiers coupled with an array of memory cells, a plurality of output data lines receiving outputs of corresponding sense amplifiers, and a plurality of precharge circuits configured to apply a precharge voltage on the output data lines. A controller provides control signals to the sense amplifiers and to the precharge circuits, including to cause the precharge circuits to precharge the output data lines before the sense amplifiers drive output data signals to the output data lines. The plurality of sense amplifiers includes banks of sense amplifiers, and each bank includes a sense amplifier having an output driving each output data line. The memory device includes data output multiplexers having inputs coupled to the output data lines, and the precharge circuits are coupled to the output data lines between outputs of the sense amplifiers and the data output multiplexers.
申请公布号 US9001604(B2) 申请公布日期 2015.04.07
申请号 US201313801500 申请日期 2013.03.13
申请人 Macronix International Co., Ltd. 发明人 Lin Yung-Feng;Lo Su-Chueh;Chen Tai-Feng;Chang Yi-Fan
分类号 G11C7/00;G11C7/06;G11C7/08;G11C7/10 主分类号 G11C7/00
代理机构 Haynes Beffel & Wolfeld LLP 代理人 Haynes Beffel & Wolfeld LLP
主权项 1. A memory device, comprising: an array of memory cells; a plurality of sense amplifiers coupled with the array; a plurality of output data lines between outputs of corresponding sense amplifiers in the plurality of sense amplifiers and inputs of data output multiplexers; a plurality of precharge circuits configured to apply a precharge voltage on the output data lines, wherein the precharge circuits precharge the output data lines before the sense amplifiers drive output data signals to the output data lines; and a controller that provides control signals to the sense amplifiers in the plurality of sense amplifiers and to the precharge circuits in the plurality of precharge circuits, wherein the controller enables the sense amplifiers to sense data at data inputs of the sense amplifiers during a sensing interval starting at a first time and ending at a second time subsequent to the first time, to output sensed data to the output data lines at the second time, and enables the precharge circuits to precharge the output data lines during a precharge interval starting at or after the first time and ending prior to the second time.
地址 Hsinchu TW