发明名称 Soft erasure of memory cells
摘要 Apparatus and method for managing data in a memory, such as but not limited to a flash memory array. In accordance with some embodiments, a soft erasure is performed on a block of memory cells by toggling an erasure status value without otherwise affecting a written state of the cells in the block. The memory cells are subsequently overwritten with a set of data using a write polarity direction determined responsive to the toggled erasure status value.
申请公布号 US9001578(B2) 申请公布日期 2015.04.07
申请号 US201213610433 申请日期 2012.09.11
申请人 Seagate Technology LLC 发明人 Kim YoungPil;Setiadi Dadi;Tian Wei;Khoueir Antoine;Bowman Rodney Virgil
分类号 G11C11/34;G11C16/04;G11C16/16;G11C11/56;G11C16/14 主分类号 G11C11/34
代理机构 Hall Estill Attorneys at Law 代理人 Hall Estill Attorneys at Law
主权项 1. A method comprising: performing a soft erasure of a block of memory cells by toggling an erasure status value without otherwise affecting a written state of the cells in the block; and subsequently overwriting a set of data to the block using a write polarity direction determined responsive to the toggled erasure status value.
地址 Cupertino CA US