发明名称 |
Soft erasure of memory cells |
摘要 |
Apparatus and method for managing data in a memory, such as but not limited to a flash memory array. In accordance with some embodiments, a soft erasure is performed on a block of memory cells by toggling an erasure status value without otherwise affecting a written state of the cells in the block. The memory cells are subsequently overwritten with a set of data using a write polarity direction determined responsive to the toggled erasure status value. |
申请公布号 |
US9001578(B2) |
申请公布日期 |
2015.04.07 |
申请号 |
US201213610433 |
申请日期 |
2012.09.11 |
申请人 |
Seagate Technology LLC |
发明人 |
Kim YoungPil;Setiadi Dadi;Tian Wei;Khoueir Antoine;Bowman Rodney Virgil |
分类号 |
G11C11/34;G11C16/04;G11C16/16;G11C11/56;G11C16/14 |
主分类号 |
G11C11/34 |
代理机构 |
Hall Estill Attorneys at Law |
代理人 |
Hall Estill Attorneys at Law |
主权项 |
1. A method comprising:
performing a soft erasure of a block of memory cells by toggling an erasure status value without otherwise affecting a written state of the cells in the block; and subsequently overwriting a set of data to the block using a write polarity direction determined responsive to the toggled erasure status value. |
地址 |
Cupertino CA US |