Semiconductor device having metal gate and manufacturing method thereof

摘要

A method of manufacturing a semiconductor device having metal gate includes providing a substrate having a first transistor and a second transistor formed thereon, the first transistor having a first gate trench formed therein, forming a first work function metal layer in the first gate trench, forming a sacrificial masking layer in the first gate trench, removing a portion of the sacrificial masking layer to expose a portion of the first work function metal layer, removing the exposed first function metal layer to form a U-shaped work function metal layer in the first gate trench, and removing the sacrificial masking layer. The first transistor includes a first conductivity type and the second transistor includes a second conductivity type. The first conductivity type and the second conductivity type are complementary.

主权项

1. A method of manufacturing a semiconductor device having metal gate comprising:
providing a substrate having a first transistor and a second transistor formed thereon, the first transistor having a first gate trench and a first conductivity type, the second transistor having a second conductivity type, and the first conductivity type and the second conductivity type being complementary; forming a first work function metal layer only in the first gate trench; forming a sacrificial masking layer in the first gate trench; removing a portion of the sacrificial masking layer to expose a portion of the first work function metal layer; removing the exposed first work function metal layer to form a U-shaped work function metal layer, wherein topmost portions of the U-shaped work function metal layer are lower than an opening of the first gate trench; and removing the sacrificial masking layer.