发明名称 Method and apparatus for semiconductor device fabrication using a reconstituted wafer
摘要 Method and apparatus for semiconductor device fabrication using a reconstituted wafer is described. In one embodiment, diced semiconductor chips are placed within openings on a frame. A reconstituted wafer is formed by filling a mold compound into the openings. The mold compound is formed around the chips. Finished dies are formed within the reconstituted wafer. The finished dies are separated from the frame.
申请公布号 US8999756(B2) 申请公布日期 2015.04.07
申请号 US201414286527 申请日期 2014.05.23
申请人 Infineon Technologies AG 发明人 Barth Hans-Joachim;Hierlemann Matthias
分类号 H01L21/56;H01L23/31;H01L21/683;H01L23/13;H01L23/538;H01L23/00;H01L25/065;H01L23/498 主分类号 H01L21/56
代理机构 Slater & Matsil, L.L.P. 代理人 Slater & Matsil, L.L.P.
主权项 1. A method of fabricating a semiconductor device, the method comprising: providing chips comprising a first chip and a second chip; placing the chips in a frame having a plurality of openings, wherein the first and the second chips are placed in a same opening of the plurality of openings, wherein the first and the second chips in the opening are separated from another chip placed with an adjacent opening of the plurality of openings by a portion of the frame; forming a reconstituted wafer by filling a mold compound into the plurality of openings, the mold compound being formed around and between the first and the second chips; forming a finished die comprising the first and the second chips, wherein the first and the second chips are coupled together through a conductive layer; and separating the finished die from the frame.
地址 Neubiberg DE