| 发明名称 | Three dimensional pipe gate nonvolatile memory device | ||
| 摘要 | A nonvolatile memory device includes a pipe gate having a pipe channel hole; a plurality of interlayer insulation layers and a plurality of gate electrodes alternately stacked over the pipe gate; a pair of columnar cell channels passing through the interlayer insulation layers and the gate electrodes and coupling a pipe channel formed in the pile channel hole; a first blocking layer and a charge trapping and charge storage layer formed on sidewalls of the columnar cell channels; and a second blocking layer formed between the first blocking layer and the plurality of gate electrodes. | ||
| 申请公布号 | US9000509(B2) | 申请公布日期 | 2015.04.07 |
| 申请号 | US201213403065 | 申请日期 | 2012.02.23 |
| 申请人 | Hynix Semiconductor Inc. | 发明人 | Lee Ki-Hong;Hong Kwon;Shin Dae-Gyu |
| 分类号 | H01L29/792;H01L29/78;H01L29/772;H01L21/28;H01L27/115;H01L29/66 | 主分类号 | H01L29/792 |
| 代理机构 | IP & T Group LLP | 代理人 | IP & T Group LLP |
| 主权项 | 1. A nonvolatile memory device comprising: a pipe gate having a pipe channel hole; a plurality of interlayer insulation layers and a plurality of gate electrodes alternately stacked over the pipe gate; a pair of columnar cell channels passing through the interlayer insulation layers and the gate electrodes and coupling a pipe channel formed in the pile channel hole; a first blocking layer and a charge trapping and charge storage layer and formed on sidewalls of the columnar cell channels;a second blocking layer formed between the first blocking layer and the plurality of gate electrodes: and a third blocking layer formed between the plurality of gate electrode and the plurality of interlayer insulation layers. | ||
| 地址 | Gyeonggi-do KR | ||