Select devices including a semiconductive stack having a semiconductive material

摘要

Methods, devices, and systems are provided for a select device that can include a semiconductive stack of at least one semiconductive material formed on a first electrode, where the semiconductive stack can have a thickness of about 700 angstroms (Å) or less. Each of the at least one semiconductive material can have an associated band gap of about 4 electron volts (eV) or less and a second electrode can be formed on the semiconductive stack.

主权项

1. A select device, comprising:
a semiconductive stack including at least one semiconductive material formed on a first electrode, wherein the semiconductive stack has a thickness of 700 angstroms or less, and wherein each of the at least one semiconductive material has an associated band gap of 4 electron volts or less, and wherein the at least one semiconductive material is a first partially nanocrystallized semiconductive material and the semiconductive stack includes an amorphous semiconductive material formed on the first partially nanocrystallized semiconductive material, and a second partially nanocrystallized semiconductive material formed on the amorphous semiconductive material; and a second electrode formed on the semiconductive stack.