Heterostructure Including Anodic Aluminum Oxide Layer

摘要

A semiconductor structure including an anodic aluminum oxide layer is described. The anodic aluminum oxide layer can be located between a semiconductor layer and another layer of material. The anodic aluminum oxide layer can include a plurality of pores extending to an adjacent surface of the semiconductor layer. The layer of material can penetrate at least some of the plurality of pores and directly contact the semiconductor layer. In an illustrative embodiment, the layer of material is a conductive material and the anodic aluminum oxide is located at a p-type contact.

主权项

1. A semiconductor structure comprising:
a first semiconductor layer; an anodic aluminum oxide layer immediately adjacent to the first semiconductor layer, wherein the anodic aluminum oxide layer includes a plurality of pores extending to an adjacent surface of the first semiconductor layer; and a layer of material immediately adjacent to the anodic aluminum oxide layer, wherein the layer of material penetrates at least some of the plurality of pores and directly contacts the first semiconductor layer.