RRAM CELL STRUCTURE WITH LATERALLY OFFSET BEVA/TEVA

摘要

The present disclosure relates to a resistive random access memory (RRAM) cell architecture, with off-axis or laterally offset top electrode via (TEVA) and bottom electrode via (BEVA). Traditional RRAM cells having a TEVA and BEVA that are on-axis can cause high contact resistance variations. The off-axis TEVA and BEVA in the current disclosure pushes the TEVA away from the insulating layer over the RRAM cell, which can improve the contact resistance variations. The present disclosure also relates to a memory device having a rectangular shaped RRAM cell having a larger area that can lower the forming voltage and improve data retention.

主权项

1. A resistive random access memory (RRAM) device comprising:
a resistive random-access memory (RRAM) cell having a first surface and a second surface; a first conductive interconnect structure abutting the first surface at a first location; and a second conductive interconnect structure abutting the second surface at a second location, wherein the first and second locations are laterally offset from one another.