BACK BRIDGE TYPE CONTACT ELECTRODE OF CRYSTALLINE SILICON SOLAR CELL AND PREPARATION METHOD THEREFOR

摘要

Disclosed are a back-surface bridge type contact electrode of a crystalline silicon solar cell and a preparation method therefor. The back-surface bridge type contact electrode of a crystalline silicon solar cell comprises a local area electrode connected to a local area back surface field, and a back surface electrode with a back surface passivation film covering on a surface thereof coming into contact with a silicon chip substrate, wherein at least one bridge electrode is provided between the local area electrode and the back surface electrode, a back surface passivation film also covers on a surface of the bridge electrode coming into contact with the silicon chip substrate, the local area electrode is connected with the back surface electrode through the bridge electrode, and a back surface passivation film is also arranged outside the connection region, except the bridge electrode, between the local area electrode and the back surface electrode. The present invention can suppress the formation of a cavity in a local area back surface field, increase the thickness of the local area back surface field, reduce the resistance loss due to the fact that minority carriers pass through the local area back surface field and then come to a contact region to be compounded, and improve the conversion efficiency of a back passivation cell.