发明名称 TWO TRANSISTOR TERNARY RANDOM ACCESS MEMORY
摘要 A two transistor ternary random access memory (TTTRAM) circuit includes an voltage/current input, an input/output switch, a first transistor, a first pull up resistor, a second transistor, and a second pull up resistor. The first transistor has a first emitter, a first collector connected to the input/output switch, and a first base. The first pull up resistor is connected to the first emitter and the voltage/current input. The second transistor has a second emitter connected to ground, a second collector, and a second base connected to the input/output switch. The second pull up resistor is connected to the first base, the second collector, and the voltage/current input.
申请公布号 WO2015048702(A1) 申请公布日期 2015.04.02
申请号 WO2014US58161 申请日期 2014.09.30
申请人 TSAOUSSIS, SIMON, PETER 发明人 TSAOUSSIS, SIMON, PETER
分类号 G11C11/34;G11C11/40;G11C11/411 主分类号 G11C11/34
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