发明名称 |
OPTICALLY-TRIGGERED SILICON CONTROLLED RECTIFIER AND METHOD OF FABRICATION OF THE SAME |
摘要 |
A device includes a semiconductor substrate having a plurality of doped layers forming first and second junctions. The semiconductor substrate includes a first surface and a second surface opposite the first surface. The device includes a plurality of waveguides defined by a plurality of glass inlaid channels defined within the first surface. Each of the plurality of glass inlaid channels extends through the second junction. The device includes a pattern of reflective elements associated with sidewalls of the plurality of glass inlaid channels to reflect light into the plurality of waveguides. A first electrically-conductive layer is disposed on the first surface and covers the plurality of glass inlaid channels. |
申请公布号 |
US2015091048(A1) |
申请公布日期 |
2015.04.02 |
申请号 |
US201414500378 |
申请日期 |
2014.09.29 |
申请人 |
SCIENTIFIC APPLICATIONS & RESEARCH ASSOCIATES, INC |
发明人 |
SPANGLER LELAND J.;WISE KENSALL D. |
分类号 |
H01L31/111;H01L31/0232 |
主分类号 |
H01L31/111 |
代理机构 |
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代理人 |
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主权项 |
1. A device, comprising:
a semiconductor substrate having a plurality of doped layers that form first and second junctions, the semiconductor substrate including a first surface and a second surface opposite the first surface; a plurality of waveguides defined by a plurality of glass inlaid channels defined within the first surface, the plurality of glass inlaid channels extending through the second junction; a pattern of reflective elements associated with sidewalls of the plurality of glass inlaid channels to reflect light into the plurality of waveguides; and a first electrically-conductive layer disposed on the first surface and covering the plurality of glass inlaid channels. |
地址 |
Cypress CA US |