| 摘要 |
An ingot growing device according to the present embodiment comprises: a quartz crucible containing a silicon melted liquid; a graphite crucible containing the quartz crucible; a crucible stand for supporting the lower portion of the graphite crucible; and a heater unit for providing heat towards the graphite crucible, wherein the graphite crucible comprises an inner body, which contacts the quartz crucible, and an outer body, which is arranged at a predetermined distance from the inner body, and an inert gas layer is formed between the inner and outer bodies, inert gas being injected into the insert gas layer. The present invention described above is advantageous in that the crucible interior is insulated during melting of polysilicon, thereby reducing heater power, and a phenomenon of concentration of degradation at a specific part of the crucible inner wall is prevented, thereby avoiding damage by degradation and lengthening the life of the crucible. |
