| 摘要 |
<p>A method for manufacturing a light emitting diode according to the present invention includes: a step of providing a substrate; a step of forming a buffer layer on the substrate; a step of forming an excess layer as an indium gallium nitrogen layer, on the buffer layer; a step of growing an epitaxial layer on the excess layer, wherein the epitaxial layer has a first semiconductor layer, a light emitting layer, and a second semiconductor layer; a step of performing an activation process on the excess layer and emitting a laser, wherein the wavelength of the laser is higher than 420nm, and the activation temperature is 1000~1400; and a step of separating the epitaxial layer from the buffer layer and the substrate.</p> |
