| 发明名称 |
SEMICONDUCTOR LASER DEVICE |
| 摘要 |
A semiconductor laser device includes a semiconductor laser element having an active layer and semiconductor layers on opposite sides of the active layer, and a PN-junction diode in part of the semiconductor layers. The PN-junction diode is connected, in inverse polarity, in parallel with the semiconductor laser element. |
| 申请公布号 |
US2015092805(A1) |
申请公布日期 |
2015.04.02 |
| 申请号 |
US201414315395 |
申请日期 |
2014.06.26 |
| 申请人 |
Mitsubishi Electric Corporation |
发明人 |
Mitsuyama Hiroshi |
| 分类号 |
H01S5/026 |
主分类号 |
H01S5/026 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor laser device comprising:
a semiconductor laser element having an active layer and a plurality of semiconductor layers located on opposite sides of the active layer; and a PN-junction diode located in part of the plurality of semiconductor layers, wherein the PN-junction diode is connected, in inverse polarity, in parallel with the semiconductor laser element. |
| 地址 |
Tokyo JP |
