METHOD, PROGRAM PRODUCT AND APPARATUS FOR PERFORMING DOUBLE EXPOSURE LITHOGRAPHY

摘要

A method of generating complementary masks based on a target pattern having features to be imaged on a substrate for use in a multiple-exposure lithographic imaging process. In embodiments, the invention provides a double exposure lithography method which trims (i.e., removes) unwanted SB residues from the substrate, that is suitable for use, for example, when printing 65 nm or 45 nm node devices or less. According to certain aspects, the present invention provides the ability to utilize large SBs due to the mutual trimming of SBs that results from the process of the present invention. Specifically, in the given process, both the H-mask and the V-mask contain circuit features and SBs, but they are in different corresponding orientations, and therefore, there is a mutual SB trimming for the H-mask and V-mask during the two exposures.

主权项

1. A computer-implemented method, comprising:
identifying a target pattern having features to be printed in a single layer of an integrated circuit device; defining data for a first mask for use with a first exposure in a double-exposure lithographic imaging process; defining data for a second mask for use with a second exposure in the double-exposure lithographic imaging process, wherein the first and second exposures use dipole illumination; modifying the data for the first mask for causing portions of the target pattern to be imaged during the first exposure using a first dipole illumination; and modifying, based on simulating the first exposure using the computer, the data for the second mask for causing trimming of main features in the target pattern during the second exposure using a second dipole illumination orthogonal to the first dipole illumination.