Method of fabricating a non-volatile memory

摘要

A structure of a memory cell includes a substrate, a well, two source/drain doped regions, a stacked layer and a metal gate. The stacked layer includes a tunneling layer, and a charge trapping layer. A method of fabricating the memory cell may vary with the change in sequence of performing steps. The difference in sequence of fabrication may yield different characteristic variations for the formed components of the memory cell.

主权项

1. A method of forming a memory cell, comprising:
providing a substrate; forming a plurality of isolations on the substrate; forming a well on the substrate; forming a stacked layer comprising a tunneling layer and a charge trapping layer on the substrate; forming a high-k gate dielectric layer on the stacked layer; forming a poly silicon gate on the high-k gate dielectric layer; forming at least two source/drain doped regions on the well; removing the poly silicon gate; and depositing a metal to a removed area of the poly silicon gate to form a metal gate.