发明名称 EPITAXIAL SILICON SOLAR CELLS WITH MOISTURE BARRIER
摘要 A thin epitaxial silicon solar cell includes one or more layers of doped oxides on the backside. A silicon nitride layer that serves as a moisture barrier is formed on the one or more layers of doped oxides. The doped oxides provide dopants for forming doped regions in an epitaxial silicon layer. Metal contacts are electrically coupled to the doped regions through the silicon nitride layer and the one or more layers of doped oxides.
申请公布号 US2015090328(A1) 申请公布日期 2015.04.02
申请号 US201314040018 申请日期 2013.09.27
申请人 SUNPOWER CORPORATION 发明人 SMITH David D.
分类号 H01L31/0216;H01L31/18 主分类号 H01L31/0216
代理机构 代理人
主权项 1. A solar cell comprising: an epitaxial silicon layer; a doped oxide on the epitaxial silicon layer; a silicon nitride layer on the doped oxide; and a metal contact on a backside of the solar cell, wherein the metal contact is electrically coupled to a doped region of the solar cell via a contact opening through the silicon nitride layer and the doped oxide.
地址 San Jose CA US