| 发明名称 |
HYBRID PHASE FIELD EFFECT TRANSISTOR |
| 摘要 |
An insulating layer is deposited over a transistor structure. The transistor structure comprises a gate electrode over a device layer on a substrate. The transistor structure comprises a first contact region and a second contact region on the device layer at opposite sides of the gate electrode. A trench is formed in the first insulating layer over the first contact region. A metal-insulator phase transition material layer with a S-shaped IV characteristic is deposited in the trench or in the via of the metallization layer above on the source side. |
| 申请公布号 |
US2015091067(A1) |
申请公布日期 |
2015.04.02 |
| 申请号 |
US201314040574 |
申请日期 |
2013.09.27 |
| 申请人 |
Pillarisetty Ravi;Doyle Brian S.;Karpov Elijah V.;Kencke David L.;Shah Uday;Kuo Charles C.;Chau Robert S. |
发明人 |
Pillarisetty Ravi;Doyle Brian S.;Karpov Elijah V.;Kencke David L.;Shah Uday;Kuo Charles C.;Chau Robert S. |
| 分类号 |
H01L29/78;H01L29/66 |
主分类号 |
H01L29/78 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method to manufacture an electronic device, comprising:
depositing a first insulating layer over a transistor structure comprising a gate electrode over a device layer on a substrate and a first contact region and a second contact region on the device layer at opposite sides of the gate electrode; forming a first trench in the first insulating layer over the first contact region; and depositing a metal-insulator phase transition material layer in the first trench. |
| 地址 |
Portland CA US |
