| 摘要 |
<p>A physical quantity sensor device (10) having a structure in which a stress-sensitive body (1) of which the electric characteristics vary depending upon the application of stress and an insulator (2) having electric insulation are formed being closely adhered together, wherein the stress-sensitive body (1) comprises a thin glass film containing an electrically conductive element that is solidly dissolved therein as atoms, a method of manufacturing the physical quantity sensor device, a piezo-resistive film comprising a thin glass film containing ruthenium that is solidly dissolved therein as atoms, and a method of manufacturing the piezo-resistive film.</p> |
