发明名称 |
HEMT DEVICE AND METHOD OF MANUFACTURING THE SAME |
摘要 |
A HEMT device has a substrate; a buffer layer disposed above the substrate; a carrier supplying layer disposed above the buffer layer; a gate element penetrating the carrier supplying layer; and a drain element disposed on the carrier supplying layer. The carrier supplying layer has a non-uniform thickness between the gate element and the drain element, the carrier supplying layer having a relatively greater thickness adjacent the drain element and a relatively thinner thickness adjacent the gate element. A non-uniform two-dimensional electron gas conduction channel is formed in the carrier supplying layer, the two-dimensional electron gas conduction channel having a non-uniform profile between the gate and drain elements. |
申请公布号 |
EP2852980(A1) |
申请公布日期 |
2015.04.01 |
申请号 |
EP20130794029 |
申请日期 |
2013.05.09 |
申请人 |
HRL LABORATORIES, LLC |
发明人 |
KHALIL, SAMEH;BOUTROS, KARIM S. |
分类号 |
H01L29/778;H01L21/027;H01L21/308;H01L21/336;H01L29/06;H01L29/20;H01L29/423 |
主分类号 |
H01L29/778 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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