发明名称 PHOTODETECTOR
摘要 <p>A photodetector 1A comprises an optical element 10, having a structure including first regions and second regions periodically arranged with respect to the first regions along a plane perpendicular to a predetermined direction, for generating an electric field component in the predetermined direction when light is incident thereon along the predetermined direction; and a semiconductor multilayer body 4 having a quantum cascade structure, arranged on the other side opposite from one side in the predetermined direction with respect to the optical element, for producing a current according to the electric field component in the predetermined direction generated by the optical element 10; while the quantum cascade structure includes an active region 4b having a first upper quantum level and a second upper quantum level lower than the first upper quantum level, and an injector region 4c for transporting an electron excited by the active region 4b.</p>
申请公布号 EP2853866(A1) 申请公布日期 2015.04.01
申请号 EP20130789996 申请日期 2013.05.10
申请人 HAMAMATSU PHOTONICS K.K. 发明人 NAKAJIMA, KAZUTOSHI;YAMANISHI, MASAMICHI;FUJITA, KAZUUE;NIIGAKI, MINORU;HIROHATA, TORU;YAMASHITA, HIROYUKI;AKAHORI, WATARU
分类号 B82Y20/00;H01L31/0232;H01L31/0352;H01L31/101;H01L31/103 主分类号 B82Y20/00
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