Halogenated organoaminosilane precursors and methods for depositing films comprising same

摘要

Described herein are precursors and methods of forming films. In one aspect, there is provided a precursor having Formula I:
XmR1nHpSi(NR2R3)4-m-n-p  I
wherein X is selected from Cl, Br, I; R1 is selected from linear or branched C1-C10 alkyl group, a C2-C12 alkenyl group, a C2-C12 alkynyl group, a C4-C10 cyclic alkyl, and a C6-C10 aryl group; R2 is selected from a linear or branched C1-C10 alkyl, a C3-C12 alkenyl group, a C3-C12 alkynyl group, a C4-C10 cyclic alkyl group, and a C6-C10 aryl group; R3 is selected from a branched C3-C10 alkyl group, a C3-C12 alkenyl group, a C3-C12 alkynyl group, a C4-C10 cyclic alkyl group, and a C6-C10 aryl group; m is 1 or 2; n is 0, 1, or 2; p is 0, 1 or 2; and m+n+p is less than 4, wherein R2 and R3 are linked or not linked to form a ring.

主权项

1. A method for forming a dielectric film on at least one surface of a substrate by a deposition process chosen from a chemical vapor deposition process and an atomic layer deposition process, the method comprising:
providing the at least one surface of the substrate in a reaction chamber; introducing at least one halogenated organoaminosilane precursor having the following Formula I:
XmR1nHpSi(NR2R3)4-m-n-p  Iwherein X is a halide selected from the group consisting of Cl, Br, I; R1 is independently selected from a linear or branched C1 to C10 alkyl group, a C2 to C12 alkenyl group, a C2 to C12 alkynyl group, a C4 to C10 cyclic alkyl, and a C6 to C10 aryl group; R2 is selected from a linear or branched C1 to C10 alkyl group, a C3 to C12 alkenyl group, a C3 to C12 alkynyl group, a C4 to C10 cyclic alkyl group, and a C6 to C10 aryl group; R3 is selected from a branched C3 to C10 alkyl group, a C3 to C12 alkenyl group, a C3 to C12 alkynyl group, a C4 to C10 cyclic alkyl group, and a C6 to C10 aryl group; m is 1 or 2; n is 0, 1, or 2; p is 0, 1 or 2; and the sum of (m+n+p) is less than 4 and wherein R2 and R3 are linked to form a ring;
introducing a nitrogen-containing source into the reaction chamber wherein the at least one halogenated organoaminosilane precursor and the nitrogen-containing source react to provide the dielectric film on the at least one surface wherein the at least one organoaminosilane precursor is selected from the group consisting of 2,6-dimethylpiperidinodichlorosilane, 2,6-dimethylpiperidinochlorosilane, cyclohexylmethylaminochlorosilane, cyclohexylethylaminochlorosilane, and cyclohexyl-iso-propylaminochlorosilane.