Semiconductor device and method of manufacturing a semiconductor device

摘要

A semiconductor device formed in a semiconductor substrate includes an isolation trench in the semiconductor substrate to laterally insulate adjacent components of the semiconductor device. A lateral isolation layer is disposed in the isolation trench. The semiconductor device further includes a source region and a drain region, and a body region and a drift region disposed between the source region and the drain region. The semiconductor device additionally includes a gate electrode adjacent to at least a portion of the body region and a field plate adjacent to at least a portion of the drift region. A field dielectric layer is disposed between the drift region and the field plate. A top surface of the field dielectric layer is disposed at a greater height measured from a first main surface of the semiconductor substrate than a top surface of the lateral isolation layer.

主权项

1. A semiconductor device formed in a semiconductor substrate, comprising:
an isolation trench in the semiconductor substrate to laterally insulate adjacent components of the semiconductor device, a lateral isolation layer being disposed in the isolation trench; a source region and a drain region; a body region and a drift region disposed between the source region and the drain region; a gate electrode adjacent to at least a portion of the body region; and a field plate adjacent to at least a portion of the drift region, a field dielectric layer being disposed between the drift region and the field plate, a top surface of the field dielectric layer being disposed at a greater height measured from a first main surface of the semiconductor substrate than a top surface of the lateral isolation layer, wherein the source region and the drain region are doped with dopants of a first conductivity type, the body region is doped with dopants of a second conductivity type, and the drift region is doped with dopants of the first conductivity type, the semiconductor device further comprising a compensation layer including a doped portion of the second conductivity type disposed adjacent to the drift region, the compensation layer being connected to a source terminal.