发明名称 |
Flexible semiconductor device, method for manufacturing the same, image display device using the same and method for manufacturing the image display device |
摘要 |
There is provided a method for manufacturing a flexible semiconductor device. The method of the flexible semiconductor device according to the present invention comprises the steps of: (i) forming an insulating layer on one of principal surfaces of a metal foil; (ii) forming a semiconductor layer on the insulating layer, and then forming source and drain electrodes so that the source and drain electrodes contact with the semiconductor layer; (iii) forming a flexible film layer so that the flexible film layer covers the semiconductor layer and the source and drain electrodes; (iv) forming vias in the flexible film layer, and thereby a semiconductor device precursor is provided; and (v) subjecting the metal foil to a processing treatment, and thereby forming a gate electrode from the metal foil, wherein, in the step (v) of the processing treatment of the metal foil, the gate electrode is formed in a predetermined position by using at least one of the vias of the semiconductor device precursor as an alignment marker. |
申请公布号 |
US8993387(B2) |
申请公布日期 |
2015.03.31 |
申请号 |
US201213821352 |
申请日期 |
2012.02.21 |
申请人 |
Panasonic Intellectual Property Management Co., Ltd. |
发明人 |
Suzuki Takeshi;Hirano Koichi;Masuda Shinobu |
分类号 |
H01L29/786;H01L29/66;H01L23/544;H01L21/027;H01L27/32 |
主分类号 |
H01L29/786 |
代理机构 |
Wenderoth, Lind & Ponack, L.L.P. |
代理人 |
Wenderoth, Lind & Ponack, L.L.P. |
主权项 |
1. A method for manufacturing a flexible semiconductor device, comprising the steps of:
(i) forming an insulating layer on one of principal surfaces of a metal foil; (ii) forming a semiconductor layer on the insulating layer, and then forming source and drain electrodes so that the source and drain electrodes contact with the semiconductor layer; (iii) forming a flexible film layer so that the flexible film layer covers the semiconductor layer and the source and drain electrodes; (iv) forming vias in the flexible film layer, and thereby a semiconductor device precursor is provided; and (v) subjecting the metal foil to a processing treatment, and thereby forming a gate electrode from the metal foil, wherein, in the step (v) of the processing treatment of the metal foil, the gate electrode is formed in a predetermined position by using at least one of the vias of the semiconductor device precursor as an alignment marker. |
地址 |
Osaka JP |